PATTERN FORMING METHOD, PATTERN FORMING EQUIPMENT, MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND SEMICONDUCTOR MANUFACTURING EQUIPMENT

摘要

PURPOSE: To improve elimination capability of a side film which is formed on the side wall of a pattern when it is formed by dry etching. CONSTITUTION: A photoresist pattern 24b formed on a laminated conductor film 23 is used as an etching mask, and a semiconductor substrate 10 is subjected to dry etching. After the laminated conductor film 23 exposed from the photoresist pattern 24b is eliminated by etching. In the state that a high frequency bias voltage is applied to the semiconductor substrate 10, plasma dry etching wherein O2 /SF6 or O2 /CHF3 or O2 /CF based gas is used as etching gas is performed, thereby eliminating a side film.