| 摘要 |
PURPOSE: To provide a gallium nitride based compound semiconductor light emitting element wherein gallium nitride based compound semiconductor doped with P-type impurities is made a low resistance P-type, the resistance value is uniform all over the wafer, independently of the film thickness, and an light emitting element can be constituted as double hetero/single hetero structure. CONSTITUTION: The element has at least a PN junction obtained by annealing at a temperature higher than or equal to 400 deg.C, after at least an N-type gallium nitride based compound semiconductor layer and a gallium nitride based compound semiconductor layer doped with P-type impurities are grown on a substrate by a vapor growth method. |
