| 摘要 |
PURPOSE: To confine light in an active layer, and to make possible laser oscillation by reducing the loss of light emitted to the outside of the active layer of a nitride semiconductor laser element by making the stripe width fo an N-type nitride semiconductor layer narrower than the width of a substrate. CONSTITUTION: At least N-type nitride semiconductor layers and P-type nitride semiconductor layers are laminated successively on a substrate 1 in an electrode stripe type laser element, and the laser element is formed in a striped shape. Since the width (b) of the N-type nitride semiconductor layer 2 electrically connected to a negative electrode 10 is made smaller than that (a) of the substrate 1 so that the emission of an active layer 5 can not spread to the N-type nitride semiconductor layer 2, the emission of the active layer 5 is confined into the striped nitride semiconductor layers and loss is reduced, and oscillation is possible at all times. When the favorable stripe width (b) of the N-type nitride semiconductor layers is set in 1-50μm, emission is not spread and a threshold current is not increased, and difficulty on manufacture is not generated.
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