发明名称 ADAPTATION LAYER METALLIZATION
摘要 PROBLEM TO BE SOLVED: To minimize stresses which are introduced thermally and mechanically into a semiconductor during solder bonding by arranging an adaptive layer metallization between a semiconductor and a semiconductor submount. SOLUTION: An adaptive layer 206 is introduced to a p-side of a semiconductor laser 104 between a semiconductor boundary face 302 and a hard AuSn solder bonding 106. Gold is selected for the adaptive layer 206, in order to provide high thermal conductivity, while suppressing mechanical stress on a semiconductor device 104. A barrier layer 208 is introduced between the adaptive layer 206 and the hard solder bonding 106 and a wet layer 210 is introduced between the barrier layer 208 and the hard solder bonding 106. By having an adaptive layer 204 develop so as to be constituted of a plurality of layers 206, 208 and 210, thermally and mechanically, stresses introduced into the semiconductor can be minimized during solder bonding.
申请公布号 JPH08213713(A) 申请公布日期 1996.08.20
申请号 JP19950303210 申请日期 1995.11.22
申请人 AT & T CORP 发明人 GASUTABU EDOWAADO DAAKITSUTSU JIYUNIYA;JIYOOZE ARUMEIDA ROORENKO;RAMESHIYU AARU BUAAMA
分类号 H01L21/52;H01L23/373;H01S5/02;H01S5/022;(IPC1-7):H01S3/18 主分类号 H01L21/52
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