首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
BRAKE PAD FOR DISC BRAKE DEVICE
摘要
申请公布号
JPH08210398(A)
申请公布日期
1996.08.20
申请号
JP19950018270
申请日期
1995.02.06
申请人
TOYOTA MOTOR CORP
发明人
ABE KENJI
分类号
F16D65/092;(IPC1-7):F16D65/092
主分类号
F16D65/092
代理机构
代理人
主权项
地址
您可能感兴趣的专利
LIGHT-EMITTING APPARATUS, ILLUMINATION APPARATUS, AND METHOD OF MANUFACTURING LIGHT-EMITTING APPARATUS
WAVELENGTH CONVERSION ELEMENT, LIGHT-EMITTING SEMICONDUCTOR COMPONENT INCLUDING A WAVELENGTH CONVERSION ELEMENT, METHOD FOR PRODUCING A WAVELENGTH CONVERSION ELEMENT AND METHOD FOR PRODUCING A LIGHT-EMITTING SEMICONDUCTOR COMPONENT INCLUDING A WAVELENGTH CONVERSION ELEMENT
COMPOSITE BOARD, LIGHT-EMITTING DEVICE, AND MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE
Sapphire Substrate with Patterned Structure
Multicolor Electroluminescence from Intermediate Band Semiconductor Structures
QUANTUM-DOT PHOTOACTIVE-LAYER AND METHOD FOR MANUFACTURE THEREOF
Method to Condition an Annealing Tool for High Quality CuZnSnS(Se) Films to Achieve High Performance Solar Cells Reliably
METHOD OF FORMING SEMICONDUCTOR DEVICE
REDUCED AREA POWER DEVICES USING DEEP TRENCH ISOLATION
SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL REGION
SEMICONDUCTOR DEVICE INCLUDING EPITAXIALLY FORMED BURIED CHANNEL REGION
APPARATUS INCLUDING GETTERING AGENTS IN MEMORY CHARGE STORAGE STRUCTURES
Method of Manufacturing Semiconductor Device
METHOD TO THIN DOWN INDIUM PHOSPHIDE LAYER
NEW BJT STRUCTURE DESIGN FOR 14NM FINFET DEVICE
HIGH VOLTAGE TRANSISTOR WITH REDUCED ISOLATION BREAKDOWN
Organic Light Emitting Display Device
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
LIGHT-EMITTING DIODE STRUCTURE AND DISPLAY APPARATUS
SELF-ALIGNED BACK SIDE DEEP TRENCH ISOLATION STRUCTURE