| 摘要 |
The invention provides a semiconductor multi-layer structure involved in a Schottky gate field effect transistor. The structure comprises a Schottky barrier structure to form a Schottky contact permitting the third conduction band edge to have such a sufficient large discontinuity as to prevent carriers to pass through the Schottky barrier layer, while the Schottky barrier structure includes a quantum well or super-lattice structure to permit carriers to exhibit a tunneling at a high probability between the quantum well layer and a cap layer doped at a sufficient high impurity concentration for permitting the fourth compound semiconductor to be in a degenerate state.
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