| 摘要 |
PURPOSE:To provide a semiconductor device which has a direct contact region formed by a method in which a gate electrode is patterned so as not to dig a semiconductor substrate even when polycrystal silicon is used for the gate electrode and to provide its manufacturing method. CONSTITUTION:A gate oxide film 4 is formed on a semiconductor substrate 1, and gate electrodes 5, 7, 16 are formed to cover the gate oxide film. An interconnection layer 18 is formed on the gate oxide film formed on a contact formation region in the semiconductor substrate 1. Then, impurities are introduced selectively into the semiconductor substrate, source/drain regions 8 are formed on both sides of the gate electrodes, and, at the same time, an impurity- diffused region 6 to be used as a contact region is formed integrally in the contact formation region to be continuous to one out of the source-/drain regions. Then, the semiconductor substrate is heat-treated, a part covering the contact region 6 in the gate oxide film is reduced, and the part which has been reduced is used as a part of the interconnection layer 18.
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