| 摘要 |
The purpose of the present invention is to provide an external resonator type wavelength-variable semiconductor laser light source adopting a "sine bar" method, in which the oscillation wavelength of the semiconductor laser can be varied within a wide range under phase-continuous conditions. In the external resonator type wavelength-variable semiconductor laser light source according to the present invention, the semiconductor laser outputs an outgoing beam from one end face coated with an antireflection film. The outgoing beam transmits the first and second prisms to be incident on a diffraction grating fixed on a rotating stage. When the second prism slides on a slope of the first prism, an arm which is connected to the second prism works together, and the diffraction grating rotates. At this time, the optical length of the beam which transmits the second prism changes, while the length of resonator does not change.
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