| 摘要 |
PURPOSE: To prevent the characteristic change due to light emission and heat and to obtain stable characteristics by forming a thin film of hydrogenated amorphous semiconductor, then forming a hole which is not hydrogenated on the inner surface of the film, and heat treating it. CONSTITUTION: An amorphous silicon layer 2 is formed by silane gas on a substrate 1 at about 180 deg.C of a substrate temperature by a plasma CVD method. Then, high energy particles 3 such as Ar ions are implanted to the layer 2 by the accelerating voltage of 1 to 5MeV by an ion gun to form a hole 4 having many unbonded hands 5 of the size of 10 to 100Å. Further, it is heat treated at about 150 deg.C for about one hour to fix hydrogen diffused in the layer 2 to the hands 5 in the hole 4. Thus, the quantity of the hydrogen which is easily diffused in the semiconductor can be reduced, thereby decreasing the change of the characteristics due to light emission or heat. |
