| 摘要 |
PURPOSE: To conduct efficiently the photoelectric conversion of a solar cell not only to light on the side of a short wavelength but to light on the side of a long wavelength by a method wherein heavily doped p-type diffused layers are respectively formed in the sides of the rears of the thick-wall parts of the peripheral parts of a p-type substrate. CONSTITUTION: A p-type substrate 1 is formed of a thin-wall part 1a of the center part of the substrate 1 and thick-wall parts 1b of the peripheral parts of the substrate 1. A p<+> diffused layer 4 for collecting holes is formed in the side of the rear of the thin-wall part 1a. Negative poles 5 are provided on the peripheral parts of an n<+> diffused layer 2 in the side of the surface of the substrate 1 and a positive pole 6 is provided on the layer 4 in the side of the rear. P<++> diffused layers 11 are respectively provided in the surface parts on the sides of the rears of the thick-wall parts. A surface impurity concentration in the layers 11 is made higher than that in the layer 4. Thereby, band gaps here, the surfaces of the layers 11, made small, positive and negative carriers are generated even by long-wave-length light, which has not been hitherto able to utilize, and the effective photoelectric conversion of a solar cell is conducted. |
