| 摘要 |
PURPOSE: To always effectively maintain the strength and gettering capacity by incorporating platelike SiO2 deposit due to dislocation in a specific density in a region separated at a specific distance or more from the surface of a semiconductor substrate. CONSTITUTION: A platelike SiO2 deposit 11b is contained in a density of 10<10> to 10<12> particles/cm<3> in an Si matrix 11a in a region separated at about 50μm or more from the surface of a semiconductor substrate 10, and oxygen between lattices is contained in a concentration of (8 to 12)×10<17> particles/cm<3> . Thus, a non-defect layer 12 is formed on an active region near the surface of the substrate, a defective layer 11 including the SiO2 deposit and dislocation is effectively formed therein, gettering capacity for contaminant substance is enhanced, and maintained. The decrease in the strength due to the oxygen between the lattices is prevented in the substrate. As a result, the increase in a leakage current, the decrease in an oxide film pressure resistance and the deformation can be prevented as well.
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