| 摘要 |
<p>A method of forming a fluorinated silicon oxide dielectric layer (33) by plasma chemical vapor deposition. The method includes the steps of creating a plasma in a plasma chamber (10) and introducing a silicon-containing gas, a fluorine-containing gas, oxygen and an inert gas such that the gases are excited by the plasma and react proximate a substrate (16) to form a fluorinated silicon oxide layer on the surface of the substrate (16). The fluorinated layer so formed has a dielectric constant which is less than that of a silicon oxide layer.</p> |
