发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THSEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME E SAME |
摘要 |
A semiconductor device of the invention is formed so that the impurity concentration of a semiconductor substrate (1) under a source diffusion layer (2) is lower than the impurity concentration on a source side of a p-type impurity diffusion layer (6). Therefore, in the semiconductor device of the invention, the junction capacitance of the p-n junction between the source and the substrate is smaller as compared with a conventional LDC structure. In general, the speed of a device is proportional to the product obtained by multiplying together a load capacitance and an inverse of a current value of the device. Accordingly, in the case of applying the present invention to a circuit such as a NAND type CMOS circuit in which a voltage is applied to a region between the source and the substrate, the speed of the device is not decreased. On the other hand, the power consumption of a device is proportional to the product obtained by multiplying together a load capacitance and the square of an applied voltage. Consequently, according to the present invention, a semiconductor device which can be operated at a low power consumption is realized. |
申请公布号 |
WO9616432(A3) |
申请公布日期 |
1996.08.15 |
申请号 |
WO1995JP02329 |
申请日期 |
1995.11.15 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;HIROKI, AKIRA;ODANAKA, SHINJI |
发明人 |
HIROKI, AKIRA;ODANAKA, SHINJI |
分类号 |
H01L29/78;H01L21/265;H01L21/336;H01L29/08;H01L29/10;H01L29/786 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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