| 摘要 |
Support for the compsn. of a galvanic prim. or sec. cell consists of an open-mesh, 3D mesh of synthetic filaments coated with void-free, thin layer(s) of metal with good conductivity, which has hump-like pits and/or bulges on the surface forming the 3D structure and increasing the distance between the synthetic filaments. The novelty is that at least the outer metal layer consists of a valve metal. Also claimed are an electrode with this support and a method of producing the support. |
