| 摘要 |
To review conductor areas on a drive-circuit substrate used for a semiconductor conversion device and to implement a semiconductor conversion device which rarely malfunctions, a drive circuit substrate 5 has respective independent conductor areas 11 to 13 for individual drive circuits 14 to 16, and a common conductor area 31 for the individual drive circuits 34 to 36 integrally formed on the surface 5a thereof together with a terminal part connected to the connection leads 6, 7. This configuration minimizes the value of the parasitic capacitance formed between the conductor areas and prevents the individual drive circuits from malfunctioning due to high frequency noise currents flowing across the parasitic capacitance. In addition, the drive circuit consists of a common ground electrical potential line 45 for the individual drive circuits 14 to 16 and individual ground electrical potential lines 46, 47, etc. for the respective individual drive circuits 14 to 16 and the individual reference electrical potential lines 46, 47, etc. are connected at a single point to the ground electrical potential line 45 using connection lines 46a, 47a, etc. This configuration prevents the drive circuit from malfunctioning as a result of a non-uniform reference electrical potential within each individual drive circuit 14, 15, or 16. <IMAGE> |
