| 摘要 |
<p>A method of manufacturing a joined-type semiconductor device having a gate structure. The semiconductor device includes a first and second semiconductor substrates (10,20) each having a substrate body, and a first and a second main surfaces (10a,20a), (10b,20b) which are opposite to each other. A gate structure is formed in the first main surface (10a) of the first substrate (10). A highly-doped semiconductor layer (21) is formed in the first main surface (20a) of the second substrate (20) and has an impurity-concentration which is higher than that of the substrate body of the second substrate (10). The first main surfaces (10a,20a) of the two substrates are joined with each other, by subjecting the two substrates to a heat treatment so that impurities in the highly-doped semiconductor layer (21) of the second substrate (20) are driven into the surface region of the first substrate (10), and a diffusion layer (15) is thereby formed in the first main surface (10a) of the first substrate (10). <IMAGE></p> |
