Verfahren zum Herstellen eines Twin-well-BICMOS-Transistors,申请号DE19883855252T-传众专利搜索

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发明名称	Verfahren zum Herstellen eines Twin-well-BICMOS-Transistors
摘要
申请公布号	DE3855252(T2)	申请公布日期	1996.08.14
申请号	DE19883855252T	申请日期	1988.12.06
申请人	TEXAS INSTRUMENTS INC., DALLAS, TEX., US	发明人	EKLUND, ROBERT H., PLANO TEXAS 75023, US;HAVEMANN, ROBERT H., GARLAND TEXAS 75042, US;HAKEN, ROGER A., DALLAS TEXAS 75229, US;SCOTT, DAVID B., PLANO TEXAS 75075, US
分类号	H01L29/73;H01L21/331;H01L21/76;H01L21/8249;H01L27/06;H01L29/732;(IPC1-7):H01L21/82;H01L21/285	主分类号	H01L29/73
代理机构		代理人
主权项
地址

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