Insulated gate semiconductor device

摘要

There is disclosed an insulated gate semiconductor device which includes a gate trench (36) having a gate electrode (38) formed therein on a gate insulating film (37), and an emitter trench (39) having an emitter electrode (40) formed therein on a silicon oxide layer (41), to form a capacitor in a main current path by using the silicon oxide layer (41) in the emitter trench (39), whereby a transient voltage upon switching is decreased and an application system including a snubber circuit is reduced in size.