SILICON SINGLE CRYSTAL AND ITS PRODUCTION

摘要

PURPOSE: To obtain a Czochralski method silicon signal crystal excellent in device specification by slowly cooling a silicone single crystal by changing a slowly cooling temp. region according to a change in the temp. gradient of the crystal axis direction at the solidification boundary between a melt and the crystal. CONSTITUTION: The slow cooling temp. region is changed according to the change in the temp. gradient of the crystal axis direction at the solidification boundary between the melt and the crystal in the method for slowly cooling the silicon single crystal under production in the certain crystal temp. region among the methods for producing the silicon single crystal by the Czochralski method. More specifically, the silicon single crystal is gradually cooled in suck a manner that T is set at 1025-54.5×G