发明名称 |
High precision voltage regulation circuit for programming multiple bit flash memory |
摘要 |
A voltage regulation circuit that includes a sample and hold circuit for sampling an input voltage and for holding a reference voltage generated in response to the input voltage. The sample and hold circuit includes a capacitor that holds the reference voltage. The voltage regulation circuit also includes a regulator circuit coupled to the capacitor of the sample and hold circuit. The regulator circuit outputs an output voltage using the reference voltage supplied by the capacitor. The voltage regulation circuit may be used to provide a high precision programming voltage for programming memory cells having two or more analog states.
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申请公布号 |
US5546042(A) |
申请公布日期 |
1996.08.13 |
申请号 |
US19950423558 |
申请日期 |
1995.04.17 |
申请人 |
INTEL CORPORATION |
发明人 |
TEDROW, KERRY D.;KEENEY, STEPHEN N.;FAZIO, ALBERT;ATWOOD, GREGORY E.;JAVANIFARD, JOHNNY;WOJCIECHOWSKI, KENNETH |
分类号 |
G05F1/46;G11C5/14;G11C11/56;G11C16/30;(IPC1-7):G05F1/613 |
主分类号 |
G05F1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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