发明名称 |
Semiconductor memory device having bipolar transistor |
摘要 |
In a memory cell array, memory cells are formed in a matrix. Bit lines are formed to be connected to prescribed memory cells. Emitters of bipolar transistors are connected to bit lines. Bipolar transistors have their bases connected to each other, and further to precharge signal control means. Collector regions of bipolar transistors are connected to a power supply node. Bipolar transistors have a base region formed by introducing a p type impurity to the entire main surface of the semiconductor substrate, and n type impurity concentration included in the collector region immediately below the base region is at most 5x1018 cm-1. Consequently, a semiconductor memory device having a bipolar transistor which is capable of high speed operation and having high reliability can be manufactured at low cost.
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申请公布号 |
US5546345(A) |
申请公布日期 |
1996.08.13 |
申请号 |
US19950460941 |
申请日期 |
1995.06.05 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
WADA, TOMOHISA;UKITA, MOTOMU |
分类号 |
H01L29/73;G11C11/419;H01L21/331;H01L21/8244;H01L21/8249;H01L27/06;H01L27/10;H01L27/11;H01L29/732;(IPC1-7):G11C7/00 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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