| 摘要 |
PURPOSE: To establish a crystal growth technology of a II-VI compd. semiconductor good in crystallinity in a liq. phase. CONSTITUTION: A temp. difference is formed between the upper and lower part of solvent, a source crystal is arranged at the high-temp. part of the solvent, and a II-VI compd. semiconductor crystal is grown at the low-temp. part of the solvent, i.e., in a liq. phase. The solvent and solute are placed in a vessel and heated by the heat radiated from a heater arranged outside the vessel. The temp. difference is formed between the upper and lower part of the solvent, the crystal is grown at the low-temp. part of the solvent, and the grown crystal is slowly cooled from the growth temp. at a rate of <=300 deg.C/hr. |
