| 摘要 |
When a write operation is indicated, a control circuit which receives the power supply voltage, generates a write control signal C, two power source voltages V1 and V2 for write which are 2 V and 10 V, respectively. Upon receipt of the write control signal C a row decoder 103 brings the word line corresponding to the memory cell transistor to be written in to 10 V and the other wordlines to 2 V. Upon receipt of the write control signal C a source line control circuit 105 brings the source line corresponding to the memory cell transistor to be written in to 0 V and the other source lines to 5 V.
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