| 发明名称 |
High Q integrated inductor |
| 摘要 |
An inductive structure for use in high frequency integrated circuits is provided. A conductive path forming the structure is arranged so extra conductive material is located at portions of the cross-section of the conductive path where current tends to flow at high frequency.
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| 申请公布号 |
US5545916(A) |
申请公布日期 |
1996.08.13 |
| 申请号 |
US19940350439 |
申请日期 |
1994.12.06 |
| 申请人 |
AT&T CORP. |
发明人 |
KOULLIAS, ICONOMOS A. |
| 分类号 |
H01F17/00;H01F27/28;H01L21/822;H01L27/04;(IPC1-7):H01L29/00 |
主分类号 |
H01F17/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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