发明名称 ION BEAM SPUTTERING VAPOR DEPOSITION DEVICE
摘要 PURPOSE: To provide a device with which a good quality thin film can be formed. CONSTITUTION: In this device, a hole 1A is formed in the outer wall of a vacuum vessel 1 and a cylindrical protrusion pipe 16 is provided so as to protrude onto the same axial center as that of this hole 1A, and also, the protruding end of the protruding pipe 16 is provided with an ionization chamber 6. An acceleration voltage source 15 is provided between a terminal 11A of a power source 11 for applying an ionization voltage between an anode 10 and a hot cathode 7, both of which are placed in the ionization chamber 6, and the ground potential, and the voltage source 15 is connected to them. This acceleration voltage EVO is also applied to a target 2. The EVO is applied between the ionization chamber 6 and the hole 1A and functions as the initial acceleration voltage of ion beams 4 and the ion beams 4 are decelerated by the EVO applied to the target 2 and collide on the target 2.
申请公布号 JPH08209344(A) 申请公布日期 1996.08.13
申请号 JP19950015151 申请日期 1995.02.01
申请人 JAPAN AVIATION ELECTRON IND LTD 发明人 ITO KAZUHIKO
分类号 G02B5/28;C23C14/46;G02B1/10;H01J37/301;H01L21/203 主分类号 G02B5/28
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