发明名称 Feed-back circuit for CMOS high voltage generator to program (E) eprom-memory cells
摘要 PCT No. PCT/NL92/00238 Sec. 371 Date Oct. 11, 1994 Sec. 102(e) Date Oct. 11, 1994 PCT Filed Dec. 29, 1992 PCT Pub. No. WO93/14555 PCT Pub. Date Jul. 22, 1993A feed-back circuit for a high voltage generator including several voltage multiplying stages connected in series, wherein an oscillator generates two clock pulses being 180 DEG out of phase to one another, controlling alternately successive voltage multiplying stages to provide a high voltage pulse at the output of the high voltage generator, the high voltage output being connected to the feed-back circuit generating a control signal supplied to the oscillator, so that the two clock pulses are modified in dependence on the high voltage output voltage, wherein the feed-back circuit includes a high voltage feed-back circuit provided with a capacitive input stage (CP, CR), the output signal (VCTRLHV) of the high voltage feed-back circuit controlling the current of a controlled current source, and at least the oscillator generating the clock pulses receives the current as control signal and in dependence thereon controls the frequency of the clock pulses.
申请公布号 US5546031(A) 申请公布日期 1996.08.13
申请号 US19940256447 申请日期 1994.10.11
申请人 SIERRA SEMICONDUCTOR B.V. 发明人 SEESINK, PETRUS H.
分类号 G11C17/00;G11C16/06;G11C16/30;H02M3/07;(IPC1-7):H03L7/06 主分类号 G11C17/00
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