| 摘要 |
A semiconductor device includes a semiconductor substrate, element isolation films, channel stop diffusion layers, and elements formed on the semiconductor substrate in spaced-apart relation from each other by means of the element isolation films. The element has a floating gate. The element isolation film has such a film thickness of <t> that the conducting type of a portion of the semiconductor substrate under the element isolation film, which is disposed at a position where a control gate is formed on the upper surface of the element isolation film by way of the floating gate, is not inverted, and that the conducting type of a portion of the semiconductor substrate under the element isolation film, which is disposed at a position where the control gate is directly formed on the upper surface of the element isolation film, is inverted. With this arrangement, the elements are separated from each other by each element isolation film having a thinner thickness of <t>.
|
