| 摘要 |
PURPOSE: To prevent the peeling of a source.drain electrode, and increase the ON current, by making the impurity concentration of a source-.drain region in a contact part lower than that of the other part. CONSTITUTION: The impurity concentration of a source.drain region in the part which directly or indirectly comes into contact with a source.drain electrode 5 is made lower than that of the other part of the source.drain region, so that the peeling of the source.drain electrode can be prevented. In the semiconductor layer of the source.drain region, the semiconductor layer in the part which comes into contact with the source.drain electrode 5 via a silicide layer 9 is composed of N<+> type microcrystal (μc) silicon as semiconductor which contains crystal, so that conductivity is remarkably increased, activation of carrier is promoted, and an ON current is increased. Thereby contact resistance is reduced and high speed operation is enabled.
|
