SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE USING THE SAME, MANUFACTURING METHOD THEREOF

摘要

PURPOSE: To avoid the deterioration in the junction characteristics at the pn junction part of a semiconductor device by avoiding the dislocation of thermal stress imposed on the inside of a bulk crystal and the dislocation caused on the surface of an epitaxial layer. CONSTITUTION: Within a semiconductor wafer composed of an n+type semiconductor substrate 1 wherein arsenic is introduced to a single crystal silicon or another semiconductor wafer composed of n+type semiconductor substrate 1 and n-type epitaxial layer 2, the inter-lattice oxygen concentration of the n+type semiconductor substrate 1 is set not to exceed 9×10<17> [atoms/cm<3> ]. Besides, within a semiconductor device composed of the n+type substrate 1 and the n-type epitaxial layer 2, the interlattice oxygen concentration of the n+type semiconductor substrate 1 is set not to exceed 9×10<17> [atoms/cm<3> ].