发明名称 SENSE AMPLIFIER CIRCUIT
摘要 <p>PURPOSE: To obtain a sufficient amplification and also a high-speed property of operation by a construction wherein a reference voltage is generated inside an amplifier and an output thereof is amplified in reverse phase to the reference voltage. CONSTITUTION: In the case where an output node SA of a bias circuit 102 is at a high level, the current capacity of an N channel MOS transistor MN2 increases and a node S1 comes to be at a low level. When the level of the node S1 is low, the current capacity of an N channel MOS transistor MN4 constituting a differential pair transistor lowers and a node R1 of the drain and the gate of a P channel MOS transistor MP3 comes to be at the high level. The current capacity of a P channel MOS transistor MP1 lowers and the node S1 is held at the low level consequently. Herein, MP1→S1→MN4→R1→MP1 form a positive feedback and the nodes S1 and R1 are amplified mutually in reverse phase to each other. Accordingly, the level of the node S1 determined by the level of the output node SA of the bias circuit 102 is amplified in comparison with the node R1 and, therefore, the voltage of the R1 comes to be a reference voltage.</p>
申请公布号 JPH08203283(A) 申请公布日期 1996.08.09
申请号 JP19950026177 申请日期 1995.01.20
申请人 NEC CORP 发明人 KONO SHIGEKI
分类号 G11C11/419;G11C7/06;G11C16/06;G11C16/26;G11C17/00;(IPC1-7):G11C11/419 主分类号 G11C11/419
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