| 摘要 |
PURPOSE: To obtain an emission diode array, and fabrication method thereof, in which the emission efficiency and the lifetime can be enhanced. CONSTITUTION: The emission diode array comprises an n-type compound semiconductor substrate diffused selectively with Zn, a diffusion layer 13b having shallow junction formed at a part in the diffusion region, a diffusion layer 13a having deep junction formed around the shallow junction diffusion layer 13b, and a p-side electrode, i.e., an Al electrode 14, coming into contact with shallow junction diffusion layer 13b. |
