| 摘要 |
PURPOSE: To provide a method for forming a high-quality AlGaInN thin film which has only a small amount of dislocation and point defects and which is suitable for manufacturing a blue semiconductor laser element which can be used for a blue light emitting diode, etc. CONSTITUTION: This is a method for forming an AlGaInN thin film on the surface of a heated SiC substrate through a buffer layer by supplying material including group III elements and material including nitrogen. First of all, a single-crystal AlN film 12 is formed on an SiC substrate which is heated to 800 deg.C. Then, a non-single-crystal AlN layer of 20nm in thickness 13 is formed at a substrate temperature of 600 deg.C. Nextly, a single-crystal AlGaN layer 14 is formed at a substrate temperature of 900 deg.C or above. Then, a lattice matching AlGaInN layer 15 is formed on the AlGaN layer 14. By this method, the appearance of a dislocation and point defects is prevented and thereby a high-quality AlGaInN thin film can be formed. |
