| 摘要 |
PURPOSE: To select respectively optimum materials for reflecting plates and nonlinear resistance two terminal elements without increasing the number of masks by producing picture element electrodes from 2-1 first metal layer with high light reflectance and a second metal layer which has a function as an upper part electrodes of nonlinear resistance two terminal elements. CONSTITUTION: An insulating film layer 5 is formed on a semiconductor layer 4 and a through hole 2 is formed on the insulating film layer 5 in a scanning line 3. A picture element 1 is formed on the insulating film layer 5 between neighboring scanning lines 3 so as to cover the through hole 2. The picture element electrode 1 is H layered body consisting of two metal layers and the metal layer 7 in the upper side is made of a metal, e.g. Al, having high light reflectance and has a function as a reflecting plate. On the other hand, the metal layer 6 in the lower side is made of a metal, e.g. Ti, which makes the properties of nonlinear resistance two terminal elements optimum and has a function as an upper electrode of a nonlinear resistance two terminal element. |
