| 摘要 |
<p>PURPOSE: To obtain a high sensitivity thin film pyroelectric element, and fabrication method thereof, in which a part corresponding to cavity can be formed without requiring any special etching step. CONSTITUTION: A thermal oxide 9 deposited on a semiconductor substrate 1 is removed partially to provide an exposed region and a CVD insulation film is deposited thereon. A bonding metal film 12 is then deposited on the surrounding thermal oxide 9 thus forming a lower electrode 13 coated with the bonding metal film 12 and the CVD insulation film. Subsequently, a pyroelectric thin film 14 is deposited on the lower electrode 13 and fired followed by formation of an upper electrode 16 thereon. An air gap 15 having similar effect as cavity is produced directly under the lower electrode 13 during the firing step.</p> |
