发明名称 METHOD FOR REDUCTION OF JUNCTION LEAK OF FIELD-EMMISION DISPLAY DEVICE AND MANUFACTURE OF FIELD-EMISSION DISPLAY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To prevent the influence on a semiconductor connecting part of the ambient environment and a photon generated on a display screen of a FED by forming a light blocking element on the baseplate between the semiconductor connecting part and the display screen. SOLUTION: An emitter area 40 of the field emission display device (FED) is formed on the n-type conductive area 58 of a base 36 formed of a p-type silicon of monocrystal, a display screen 48 arranged opposite to the emitter area 40 has a fluorescent coating film 50 within the passage of electrons 54 emitted from the emitter area 40. When the voltage of the emitter area 40 is differed from those of a grid 42 and the display screen 48, the electrons 54 emitted from the emitter area 40 are collided to the fluorescent coating film 50 to generate photons 56 for lighting the display screen 48. A light blocking layer 64 is formed on a base plate 70 between a semiconductor connecting part and the surface screen 48. This light blocking layer 64 prevents the light from the ambient environment, and also prevents the light generated on the display screen 48 from being collided with the semiconductor connecting part on the base 36.</p>
申请公布号 JPH08202286(A) 申请公布日期 1996.08.09
申请号 JP19950201769 申请日期 1995.07.14
申请人 MICRON DISPLAY TECHNOL INC 发明人 DEIBITSUDO EI KASEI JIYUNIA;JIYON RII
分类号 G09F9/30;H01J9/02;H01J29/04;H01J29/06;H01J29/89;H01J31/12;(IPC1-7):G09F9/30 主分类号 G09F9/30
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