| 摘要 |
PURPOSE: To provide a semiconductor storage device of a memory macro system which can realize arbitrary storage capacity in a short design term, and reduce the chip cost without necessitating a large area on a semiconductor chip. CONSTITUTION: The semiconductor storage device is povided with submemory- macros 11, 12 having a DRAM memory cell array 21 and a row decoder 24 and a column decoder 27 which select an arbitrary memory cell out of the memory cell array, and a control part macro 15 having a DC potential generating circuit 32 which generates various kinds of DC potentials which are necessary at the time of operating the submemory-macros. A memory having the total storage capacity equal to arbitrary positive number times N-bit is constituted of one chip by combining at least one submemory-macro and one control part macro.
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