发明名称 SURFACE WAVE DEVICE
摘要 PURPOSE: To provide a large electromechanical coupling coefficient by forming a specified piezoelectric thin film on a piezoelectric substrate composed of a specified LiNbO3 single crystal. CONSTITUTION: This device is provided with the piezoelectric substrate 17 composed of a Y-cut Z-direction propagation LiNbO3 single crystal, at least one interdigital transducer formed on the positive Y-surface of the piezoelectric substrate 17 and a positive surface piezoelectric thin film 8 formed on the positive Y-surface of the piezoelectric substrate 17 and composed of one kind among ZnO, Ta2 O5 and CdS. Then, in the case of forming the piezoelectric thin film 18 of a positive surface or a negative surface on the positive Y-surface or negative Y-surface of the piezoelectric substrate 17 composed of the Y-cut Z-direction propagation LiNbO3 single crystal, the electromechanical coupling coefficient is effectively improved. Preferably, when the film thickness of the piezoelectric thin film 18 is defined as H and the wavelength of surface waves to be propagated is defined asλ, H/1 is within the range of 0.08-0.3. Thus, efficiency is effectively improved in the case of performing utilization in elastic convolver and sufficient resonance characteristics and filter characteristics are obtained in the other surface wave device as well.
申请公布号 JPH08204499(A) 申请公布日期 1996.08.09
申请号 JP19950010081 申请日期 1995.01.25
申请人 MURATA MFG CO LTD 发明人 KADOTA MICHIO
分类号 H03H9/145;H03H9/25;H03H9/72;(IPC1-7):H03H9/25 主分类号 H03H9/145
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