| 摘要 |
PURPOSE: To easily peel residues of a photoresist at low temp. in a short time and to make possible ultramicro fabrication without corroding the wiring material by preparing the peeling liquid from a soln. containing specified alkanol amines, acid amides and sugar or sugar alcohols. CONSTITUTION: This compsn. contains 5-50wt.% alkanol amines, alkoxyalkylamines or alkoxyalikanol amines expressed by formula (R<1> R<2> - NCm H2m OR<3> ), 1-30wt.% acid amides, 0.5-15wt.% sugar or sugar alcohols and the balance water. In formula, R<1> and R<2> are hydrogen atoms or C1-C4 alkyl groups or hydroxyethyl groups, R<3> is a hydrogen atom or C1-C4 alkyl group, hydroxyethyl group or the like, and m is an integer 2 to 4. When the concn. of alkanol amides is lower than 5wt.%, the peeling rate for a photoresist decreases. If the concn. is higher than >50wt.%, corrosion of the wiring material can not be prevented. |
