| 摘要 |
<p>PURPOSE: To enhance moisture proof characteristic and resistance to temperature change by forming a dense film to prevent moisture on the side surface of a semiconductor device and stacking a hard type joining covering resin which becomes the outer seath to cover the coupling point between the device and lead wire and the soft joining point protecting resin which alleviates a stress during injection of resin. CONSTITUTION: The side surface of a MESA type semiconductor device 10 of which PN junction is exposed to the side surface is covered with a hard joining point covering resin 9 and this side surface is further covered with a soft joining point protecting resin 8. Moreover, the device is surrounded with an injection type resin 7. Therefore, moisture is prevented to reach the exposed surfaceof the PN junction with a joinint point covering resin 9. Moreover, fatigue of soldered area due to thermal stress due to intermittent internal generation of heat or external temperature change can be prevented by conrolling the solder layer 6 between the semiconductor device 10 and lead wire 5. Moreover, an injection pressure during resin mold can be eased with the joining point protecting resin 8 to prevent influence on the PN junction of the semiconductor device 10 and reduce mechanical loss of the semiconductor device 10.</p> |
