| 摘要 |
PURPOSE: To manufacture a semiconductor storage device at a low cost, by making a mask unnecessary at the time of forming a contact hole for a cylindrical storage node electrode. CONSTITUTION: A part of a cylindrical storage node electrode in a capacitor which constitutes a memory cell is formed by using a polycrystalline Si film 61, and a contact hole 63 for a storage node electrode is formed by etching by using a side wall, which is constituted of an SiO2 film 62 in a recessed part 57 formed in an SiO2 film 56, as a mask. Since the side wall constituted of the SiO2 film 62 can be formed by using self alignment to the recessed part 57, a mask is unnecessary at the time of forming the contact hole 63. |
