| 摘要 |
<p>PURPOSE: To reduce the formation of the electrodes of a field effect transistor having a comb-type electrode structure from the formation of the electrodes in three layers to the formation of the electrodes in two layers to simplify the processes for manufacturing the transistor. CONSTITUTION: When first layer source electrodes 7 and first layer drain electrodes 8 are formed, a gate busbar 9 is formed in the same process as that for forming the electrodes 7 and 8 and when second layer gate electrodes 13 are formed, the electrodes 13 are connected with the gate busbar 9 and mat the same time, a source electrode wiring 14 and a drain electrode wiring 16, which are respectively connected with the electrodes 7 and the electrodes 8, are formed.</p> |
