| 摘要 |
PURPOSE: To provide a method for solid-phase diffusion which allows the high- concentration diffusion of Zn without damaging an interface with the surface of a substrate. CONSTITUTION: A ZnO.SiO2 film 12 is formed in the thickness of 150Å on a GaAs0.8 P0.2 epitaxial substrate 10 using a sputtering method. Nextly, on the ZnO.SiO2 film 12, a Zn oxide film, that is, a ZnO film is formed in the thickness of 1500Å. On the ZnO film, an SiO2 film is formed in the thickness of 500Å as an annealing cap film 16 to cover a diffusion source. After that, this laminate is passed through annealing at 700 deg.C for 60 minutes and thereby Zn is solid- phase diffused and then a Zn diffusion region of a bonding depth of about 1.5μm is formed. |
