| 摘要 |
PURPOSE: To minimize the damage in a laser trimming step by a method wherein the wiring layer for laser trimming step is provided on an insulating layer on conductivity well opposite to that of a silicon substrate. CONSTITUTION: The trimming step is performed by cutting off wiring layers 14 for a laser trimming step so that the damage to a silicon substrate 11 can be suppressed during the laser trimming step in a P type well 12. Besides, the damage caused in the P type well 12 can be prevented from expanding outward. Since the P type well 12 is provided beneasth a silicon oxide layer 13, the damage can be minimized during the laser trimming step. Accordingly, the wiring layers 14 are preliminarily formed for laser trimming so that said layers 14 may be cut off if necessary. Thus, the semiconductor device can be realized without deteriorating the characteristics and the reliability of the IC. |
