| 摘要 |
The power semiconductor includes a conductive box (2) and two insulating layers (3,4). A semiconductor element (1) fixed on one insulating layer (3), having upper (30) and lower (32) metallised surfaces, is provided in the box. Output terminals (14,16,18) are in contact with respective semiconductor layers. The other insulating layer (4), with upper (40) and lower (42) metallised surfaces, is placed between the initial insulating layer and the box. A complementary output terminal (20) is in contact with the metallic surfaces of the two abutting insulating blocks. The semiconductor and the insulating blocks are all covered with an insulating resin. <IMAGE> |
