| 摘要 |
PURPOSE: To reduce the current consumption when a bit line is charged/ discharged and enlarge the read signal. CONSTITUTION: Each bit line 23 is divided in four. The divided bit lines are connected by three MOS transistors 27 which are controlled by signal lines 28a and 28b to turn the bit line 23 farther from a selected memory cell 21 seen from a sense amplifier 24 into a non-selected state. The capacity of the bit line becomes smaller as the bit line is closer to the sense amplifier 24. This structural unit is arranged so as to alternate the sense amplifiers 24 to a cell array 26. Such a layout is designed that the capacity of a cell is proportional to the capacity of the bit line. |
