| 摘要 |
PURPOSE: To enable forming a thick silicon oxide film only on a pad polycrystalline silicon film by a simple process. CONSTITUTION: Phosphorus is introduced in a polycrystalline silicon film 9 on an N-type impurity diffusion layer 6 while introducing arsenic in the polycrystalline silicon film 9 on an N-type impurity diffusion layer 5. A pad polycrystalline silicon film 14 containing arsenic is formed while covering the upper part of the N-type impurity diffusion layer 5, and a lower electrode 15 of a capacitor which contains phosphorus is formed while covering the upper part of the N-type impurity diffusion layer 6. After a silicon nitride films is formed on the pad polycrystalline silicon film 14 and on the lower electrode 15 of the capacitor, thermal oxidation is performed, and a silicon oxide film 16' is formed on the pad polycrystalline silicon film 14. |
