| 摘要 |
PURPOSE: To make a high-degree dimensional control possible in the manufacture of a semiconductor device as well as to make the simplification of the processes for the manufacture possible by a method wherein a polymethyl methacrylate electron-beam resist is used as an electron-beam resist and a phenolic hydroxyl group-containing styrene resin negative resist is used as a photoresist. CONSTITUTION: An electron-beam resist film 7 is formed on a semiconductor substrate 5 to form an aperture pattern 1 and a photoresist film 8 is formed on the film 7 to form an aperture pattern 2 in the film 8 in such a way that the aperture pattern 1 is exposed. A gate electrode 10 with a T-shaped sectional form is formed through these two aperture patterns 1 and 2. In the case where a semiconductor device is manufactured through such the processes, the film 7 is provided so that it is a polymethyl methacrylate electron-beam resist and the film 8 is provided so that it is a phenolic hydroxyl group-containing styrene resin negative resist. For example, a gate electrode wiring part 11 is formed simultaneously with a gate electrode 10. |
