| 摘要 |
<p>A device for shielding the environment against the heat produced when SiC is epitaxially grown by Chemical Vapour Deposition on a substrate (9) by using a susceptor (8) heated for heating the substrate and a gas mixture fed to the substrate for the growth, comprises a tube defining a room (22) arranged to receive the susceptor and the substrate. The inner walls of the tube are at least close to the susceptor (8) coated by a thin heat-reflecting film (15), preferably a carbon film. This film may be applied to the inside of the tube by introducing a C-containing gas, which is heated until cracking. Enclosing the substrate and the susceptor in a casing (2, 14) and flushing the casing with Ar-gas is another way of shielding the environment against the heat produced by the process.</p> |
