发明名称 |
HIGH BRIGHTNESS ELECTROLUMINESCENT DEVICE EMITTING IN THE GREEN TO ULTRAVIOLET SPECTRUM, AND METHOD OF MAKING THE SAME |
摘要 |
A green-blue to ultraviolet light emitting semiconductor laser (90) having a top contact (91), top Bragg reflector (92), bottom Bragg reflector (93), cladding layer (94), active layer (95), cladding layer (96), buffer (97), substrate (98), bottom contact (99) and passivation layer (100). The key aspect of the invention is a Ga*N material on a base structure comprising a SiC substrate selected from the group consisting of 2H-SiC, 4H-SiC and a-axis oriented 6H-SiC. Cladding layers (94 and 96) have larger band gaps than the active layer (95) and are complementarily doped.
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申请公布号 |
WO9624167(A1) |
申请公布日期 |
1996.08.08 |
申请号 |
WO1996US01724 |
申请日期 |
1996.02.05 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC.;REDWING, JOAN;TISCHLER, MICHAEL, A. |
发明人 |
REDWING, JOAN;TISCHLER, MICHAEL, A. |
分类号 |
H01L33/00;H01L33/10;H01L33/32;(IPC1-7):H01L33/00;H01L29/161;H01L29/20;H01L29/22 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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