Halbleitervorrichtung mit Mehrlagenverdrahtung und Verfahren zu ihrer Herstellung

摘要

A semiconductor device having multilayer wiring for providing power and control signals to elements of the device comprising, a first wiring element (14, 15) for supplying power to a plurality of elements of the semiconductor device, a second wiring element (11, 12, 13) made of a first material for carrying direct current or pulsed direct current to at least one element of said semiconductor device, and a third wiring element (16) made of a second material for carrying bidirectional signals to at least one element of said semiconductor device, wherein the resistance to electromigration of the first material is higher than the resistance to electromigration of the second material.